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Электронный компонент: MMBF5486

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2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
2N5484
2N5485
2N5486
MMBF5484
MMBF5485
MMBF5486
N-Channel RF Amplifier
This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
Sourced from Process 50.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
DG
Drain-Gate Voltage
25
V
V
GS
Gate-Source Voltage
- 25
V
I
GF
Forward Gate Current
10
mA
T
J
,T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
G
S
D
TO-92
SOT-23
Mark: 6B / 6M / 6H
G
S
D
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5484
*MMBF5484
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
225
1.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
556
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
ON CHARACTERISTICS
V
(BR)GSS
Gate-Source Breakdown Voltage
I
G
= - 1.0
A, V
DS
= 0
- 25
V
I
GSS
Gate Reverse Current
V
GS
= - 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0, T
A
= 100
C
- 1.0
- 0.2
nA
A
V
GS(off)
Gate-Source Cutoff Voltage
V
DS
= 15 V, I
D
= 10 nA
2N5484
2N5485
2N5486
- 0.3
- 0.5
- 2.0
- 3.0
- 4.0
- 6.0
V
V
V
I
DSS
Zero-Gate Voltage Drain Current*
V
DS
= 15 V, V
GS
= 0
2N5484
2N5485
2N5486
1.0
4.0
8.0
5.0
10
20
mA
mA
mA
SMALL SIGNAL CHARACTERISTICS
g
fs
Forward Transfer Conductance
V
DS
= 15, V
GS
= 0, f = 1.0 kHz
2N5484
2N5485
2N5486
3000
3500
4000
6000
7000
8000
mhos
mhos
mhos
Re
(
y
is)
Input Conductance
V
DS
= 15, V
GS
= 0, f = 100 MHz
2N5484
V
DS
= 15, V
GS
= 0, f = 400 MHz
2N5485 / 2N5486
100
1000
mhos
mhos
g
os
Output Conductance
V
DS
= 15, V
GS
= 0, f = 1.0 kHz
2N5484
2N5485
2N5486
50
60
75
mhos
mhos
mhos
Re
(
y
os)
Output Conductance
V
DS
= 15, V
GS
= 0, f = 100 MHz
2N5484
V
DS
= 15, V
GS
= 0, f = 400 MHz
2N5485 / 2N5486
75
100
mhos
mhos
Re
(
y
fs)
Forward Transconductance
V
DS
= 15, V
GS
= 0, f = 100 MHz
2N5484
V
DS
= 15, V
GS
= 0, f = 400 MHz
2N5485
2N5486
2500
3000
3500
mhos
mhos
mhos
C
iss
Input Capacitance
V
DS
= 15, V
GS
= 0, f = 1.0 MHz
5.0
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15, V
GS
= 0, f = 1.0 MHz
1.0
pF
C
oss
Output Capacitance
V
DS
= 15, V
GS
= 0, f = 1.0 MHz
2.0
pF
NF
Noise Figure
V
DS
= 15 V, R
G
= 1.0 k
,
f = 100 MHz
2N5484
V
DS
= 15 V, R
G
= 1.0 k
,
f = 400 MHz
2N5484
V
DS
= 15 V , R
G
= 1.0 k
,
f = 100 MHz
2N5485 / 2N5486
V
DS
= 15 V, R
G
= 1.0 k
,
f = 400 MHz
2N5485 / 2N5486
4.0
3.0
2.0
4.0
dB
dB
dB
dB
*
Pulse Test: Pulse Width
300 ms, Duty Cycle
2%
N-Channel RF Amplifier
(continued)
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
Typical Characteristics
Transfer Characteristics
-5
-4
-3
-2
-1
0
0
4
8
12
16
20
V - GATE-SOURCE VOLTAGE(V)
I
-
DR
AI
N
CU
R
R
EN
T
(
m
A)
D
GS(OFF)
V = -4.5V
V = 15V
DS
T = +25 C
A
O
-2.5 V
T = -55 C
O
A
T = +125 C
A
O
T = -55 C
O
A
T = +25 C
A
O
T = +125 C
A
O
GS
Channel Resistance vs Temperature
-50
0
50
100
150
10
20
30
50
100
200
300
500
1000
T - AMBIENT TEMPERATURE ( C)
r
-
DR
AI
N

O
N

R
E
SI
ST
AN
CE

(
)
V = -1.0V
GS(OFF)
-2.5 V
-5.0V
-8.0 V
V = 100mV
DS
V = 0 V
GS
DS
A
Transconductance
Characteristics
-5
-4
-3
-2
-1
0
0
1
2
3
4
5
6
7
V - GATE-SOURCE VOLTAGE(V)
g
f
s
--

T
R
AN
S
C
O
N
D
U
CT
AN
CE
(
m
m
h
o
s
)
V = -4.5V
GS(OFF)
V = 15V
DS
T = +25 C
A
O
-2.5 V
T = -55 C
O
A
T = +125 C
A
O
T = -55 C
O
A
T = +25 C
A
O
T = +125 C
A
O
GS
Common Drain-Source
Characteristics
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
V - DRAIN-SOURCE VOLTAGE(V)
I

--
D
R
AI
N

CU
R
R
E
N
T
(
m
A
)
V
=
0V
GS
-2.5V
DS
-0.5
V
-4.0V
-2.0
V
-1.0
V
-3.5V
-3.0V
-1.5
V
T = +25 C
A
O
TYP V = -5.0V
GS(OFF)
D
Transconductance
Parameter Interactions
1
2
3
5
7
10
10
20
1
2
3
5
10
20
30
50
100
V - GATE-SOURCE VOLTAGE(V)
r

-- DR
A
I
N
"
O
N
"
R
E
S
I
S
T
A
N
C
E
(
)
g
fs --
- TR
A
N
S
C
O
N
D
U
C
T
A
N
C
E

( m
m
h
o
s )
GS
I --
D
R
A
I
N

C
U
RRE
N
T
( m
A
)
DSS
DS
gfs, I @ V = 15 V, V = 0 PULSE
GS
DS
DSS
r @ V = 100mV, V = 0
GS
DS
DS
V @ V = 15V, I = 1nA
GS(OFF)
GS
D
-
-
-
-
-
-
Output Conductance vs
Drain Current
0.01 0.02
0.05 0.1
0.2
0.5
1
2
5
10
0.1
0.5
1
5
10
20
I -- DRAIN CURRENT (mA)
g
o
s
-
-
OUT
P
U
T
C
O
ND
UC
T
A
NC
E
(
u
m
h
o
s
)
D
15
10
T = +25 C
A
O
f = 1.0 kHz
15
10
5
20
15V
10V
5.0V
20V
20
V = 5v
DG
V = -5.5V
GS(OFF)
V = -3.5V
GS(OFF)
V = -1.5V
GS(OFF)
N-Channel RF Amplifier
(continued)
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
-

POW
E
R DISSI
P
A
TIO
N
(
m
W
)
D
o
Transconductance vs
Drain Current
0.01 0.02
0.05 0.1
0.2
0.5
1
2
5
10
0.1
0.5
1
5
10
I - DRAIN CURRENT (mA)
g
f
s
-
-
T
RANSC
O
N
D
U
C
T
A
N
C
E (
m
mhos
)
D
GS
V = - 5V
GS(OFF)
GS
V = - 1.5V
GS(OFF)
T = -55 C
O
A
T = +25 C
A
O
T = +125 C
A
O
T = -55 C
O
A
T = +25 C
A
O
T = +125 C
A
O
V = 15V
f = 1.0 kHz
DG
Noise Voltage vs Frequency
0.01
0.03
0.1
0.3
1
3
10
30
100
1
5
10
f -- FREQUENCY (kHz)
e
-
N
O
I
S
E
V
O
L
T
A
G
E
(
n
V
/
H
z
)
V = 15V
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2 f @ f > 1.0 kHz
I = 0.5 mA
D
I = 3 mA
D
n
Capacitance vs Voltage
-20
-15
-10
-5
0
1
5
10
V -- GATE-SOURCE VOLTAGE(V)
C

( C

)

-- C
A
P
A
C
I
T
A
N
C
E
(pF)
GS
is
rs
C ( V = 0 V)
C ( V = 15 V)
C ( V = 15 V)
DS
DS
is
rs
f = 0.1 - 1.0 MHz
Noise Figure Frequency
10
20
30
50
100
200 300
500
1000
0
1
2
3
4
5
f -- FREQUENCY (MHz)
N
F

-
-
N
O
ISE F
I
G
U
R
E
(
d
B
)
V = 15V
DS
I = 5.0 mA
R = 1.0 k
T = +25 C
A
O
D
g
N-Channel RF Amplifier
(continued)
SOT-23
TO-92
Typical Characteristics
(continued)
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
Common Source Characteristics
Input Admittance
100
200
300
500
700
1000
1
5
10
f -- FREQUENCY (MHz)
Y
--
IN
P
U
T
AD
M
I
T
T
A
N
C
E (
m
m
hos)
V = 15V
V = 0
GS
DS
(CS)
g
iss
is
s
b
iss
Output Admittance
100
200
300
500
700
1000
1
f -- FREQUENCY (MHz)
Y
-
-


O
U
T
P
UT
CO
NDUCT
A
NCE
(m
m
h
o
s
)
V = 15V
V = 0
GS
DS
(CS)
OS
S
b (x 10)
OSS
g
OSS
Forward Transadmittance
100
200
300
500
700
1000
1
5
10
f -- FREQUENCY (MHz)
Y

-
-

F
O
R
W
AR
D

TR
AN
S
F
E
R
(
m
m
h
o
s
)
V = 15V
V = 0
GS
DS
(CS)
-b
fss
fs
s
+g
fss
Reverse Transadmittance
100
200
300
500
700
1000
1
5
10
f -- FREQUENCY (MHz)
Y

-
-
R
EVE
R
SE T
R
A
N
S
F
ER

(
m
mh
os
)
rs
s
V = 15V
V = 0
GS
DS
(CS)
- b
-g ( X 0.1)
rss
rss
N-Channel RF Amplifier
(continued)
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
Common Gate Characteristics
N-Channel RF Amplifier
(continued)
Input Admittance
100
200
300
500
700
1000
1
5
10
f -- FREQUENCY (MHz)
Y

-
-
I
NPUT
A
D
M
I
T
T
A
NC
E

(
m
m
h
o
s
)
V = 15V
V = 0
GS
DS
(CG)
g
igs
ig
s
b
igs
Forward Transadmittance
100
200
300
500
700
1000
1
5
10
f -- FREQUENCY (MHz)
Y
-
-
F
O
RWAR
D
T
R
A
N
S
F
E
R


(
m
m
h
o
s
)
V = 15V
V = 0
GS
DS
(CG)
-b
fgs
fg
s
+g
fgs
Reverse Transadmittance
100
200
300
500
700
1000
1
f -- FREQUENCY (MHz)
Y
--

REV
E
R
SE
T
R
A
N
S
F
E
R (m
m
h
o
s
)
rg
s
V = 15V
V = 0
GS
DS
(CG)
g
rgs
- b
rgs
Output Admittance
100
200
300
500
700
1000
1
f -- FREQUENCY (MHz)
Y
-
-
O
U
T
PUT
C
O
N
D
UC
TA
NC
E
(
m
m
h
o
s
)
V = 15V
V = 0
GS
DS
(CG)
og
s
b (x 10)
OgS
g
Ogs
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrenchTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
TinyLogicTM
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.